High‐Quality CsPbBr3 Perovskite Films with Modal Gain above 10 000 cm−1 at Room Temperature

Author:

Tatarinov Dmitry A.1,Anoshkin Sergey S.1,Tsibizov Ivan A.1,Sheremet Volodymyr2,Isik Furkan2,Zhizhchenko Alexey Y.34,Cherepakhin Artem B.4,Kuchmizhak Aleksandr A.34,Pushkarev Anatoly P.1ORCID,Demir Hilmi Volkan25,Makarov Sergey V.16ORCID

Affiliation:

1. School of Physics and Engineering ITMO University 197101 St. Petersburg Russia

2. UNAM‐Institute of Materials Science and Nanotechnology Department of Electrical and Electronics Engineering Department of Physics Bilkent University 06800 Ankara Turkey

3. School of Engineering Far Eastern Federal University 690091 Vladivostok Russia

4. Institute of Automation and Control Processes (IACP) Far Eastern Branch of the Russian Academy of Science 690091 Vladivostok Russia

5. LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays School of Electrical and Electronic Engineering School of Physical and Materials Sciences School of Materials Science and Engineering Nanyang Technological University Singapore 639798

6. Qingdao Innovation and Development Center Harbin Engineering University Qingdao Shandong 266000 China

Abstract

AbstractHalide perovskite lasers based on CsPbBr3 micro‐ and nanoscale crystals have demonstrated fascinating performance owing to their low‐threshold lasing at room temperature and cost‐effective fabrication. However, chemically synthesized thin films of CsPbBr3 usually have rough polycrystalline morphology along with a large amount of crystal lattice defects and, thus, are mostly utilized for the engineering of light‐emitting devices. This obstacle prevents their usage in many photonic applications. Here, a protocol to deposit large‐grain and smooth CsPbBr3 thin films is developed. Their high quality and large scale allow to demonstrate a maximum optical gain up to 12 900 cm−1 in the spectral range of 530–540 nm, which is a record‐high value among all previously reported halide perovskites and bulk semiconductors (e.g., GaAs, GaN, etc.) at room temperature. Moreover, femtosecond laser ablation technique is employed to create high‐quality microdisc lasers on glass from these films to obtain excellent lasing characteristics. The revealed critical roles of thickness and grain size for the CsPbBr3 films with extremely high optical gain pave the way for development of low‐threshold lasers or ultimately small nanolasers, as well as to apply them for polaritonic logical elements and integrated photonic chips.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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