Deuterium Renders Fast Risc and Low Non‐Radiation Decays of TADF Emitters

Author:

Qin Yuanyuan12,Xie Xin12,Pang Zhi12,Liu Guanhao12,Dong Xiangyu12,Shen Shaogang12,Zhang Yaogang3,Lee Chun‐Sing4,Yi Yuanping3,Wang Pengfei12,Wang Ying12ORCID

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU−CAS Joint Laboratory of Functional Materials and Devices Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China

2. University of Chinese Academy of Sciences Beijing 100049 P. R. China

3. Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China

4. Center of Super‐Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR 999077 P. R. China

Abstract

AbstractA simple strategy to simultaneously achieve fast reverse intersystem crossing (RISC) and low non‐radiative decay rates in thermally activated delayed fluorescence (TADF) emitters is still lacking. Here, the green TADF emitters containing aromatic ketones and prepared D‐Ph and D‐PhCz containing different amounts of deuterium are deuterated to study the mechanism of deuterium on the performance improvement of TADF devices. Due to the heavy atom effect of deuterium, the non‐radiative transition rate constant (knr) of D‐Ph and D‐PhCz decreases. Most importantly, deuterium reduces the reorganization energy (λ) of (T1‐S1), which greatly improves the reverse intersystem crossing rate constant (kRISC) and the exciton utilization efficiency. The results show that the external quantum efficiency of D‐Ph and D‐PhCz increases to 25.69% and 24.92%, respectively. This study provides a simple and efficient strategy for reducing non‐radiative energy loss and increasing kRISC to achieve high‐performance TADF emitters.

Funder

Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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