Impacts of the Lattice Strain on Light Emission in Layered Perovskite Thin flakes

Abstract

AbstractStrain engineering, as a non‐chemical tuning knob, can enhance the performance of semiconductor devices. Here, an efficient manipulation of light emission is revealed in thin‐layered 2D perovskite strongly correlated to layer numbers of [PbI6]4− octahedron (n) and [C6H5(CH2)2NH3]2(CH3NH3)n‐1PbnI3n+1 (N) by applying uniaxial strains (ɛ) via bending the flexible substrate. As <n> increases from 1 to 3, an efficient light emission redshift (ɛ from −0.97% to 0.97%) is observed from bandgap shrinkage, and the shrinkage rate increases from 1.97 to 10.38 meV/%, which is attributed to the predominant uniaxial intralayer deformation due to the anisotropy of the [PbI6]4− octahedron lattice strain. Conversely, as <N> increases from 7 to 48 for n = 3, the deformation related to bandgap shrinkage rate is more prominent in small‐N flakes (<N> ≈ 7, 15.2 meV/%) but is easily offset in large‐N flakes (<N> ≈ 48, 7.7 meV/%). This anisotropic lattice deformation, meanwhile, inevitably modulates the carrier recombination dynamics of [C6H5(CH2)2NH3]2(CH3NH3)n‐1PbnI3n+1, which is essential for the development of highly efficient photoelectronic devices.