Affiliation:
1. Advanced Technology Institute School of Computer Science and Electronic Engineering University of Surrey Guildford GU2 7XH UK
2. Max Planck Institute for Solid State Research 70569 Stuttgart Germany
Abstract
AbstractWith growing interest in organic phototransistors, as not only sensors but also neuromorphic computing elements, the vast majority of research investigates structures comprising Ohmic source/drain contacts. Here, it is shown how source‐gated transistors (SGTs), in which a source contact barrier dominates electrical characteristics, can be implemented as phototransistors. Organic photo‐SGTs (OPSGTs) based on vacuum‐processed small‐molecule dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐]thiophene (DNTT) demonstrate low saturation voltage, exceptional tolerance to channel length variation, and photo‐to‐dark current ratio (PDCR) peaks over 106 for 819 µW broad spectrum incident light power. At zero gate‐source voltage, the PDCR reaches 104, showing promise for simple sensor circuit implementation in medical and wellbeing applications.
Funder
Engineering and Physical Sciences Research Council
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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