High‐Performance UV Photodetector via Energy Band Engineering and LSPR‐Enhanced Pyro‐Phototronic Effect in Au Decorated 2D‐PbI2/1D‐ZnO Heterojunction

Author:

Zheng Xuemei12,Dong Mengji23,Li Qi24,Liu Yanli25,Di Xuan25,Lu Xianmao12,Meng Jianping23,Li Zhou12ORCID

Affiliation:

1. College of Chemistry and Chemical Engineering Guangxi University Nanning 530004 China

2. Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 101400 China

3. School of Nanoscience and Engineering University of Chinese Academy of Sciences Beijing 100049 China

4. College of Materials Science and Opto‐Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China

5. School of Engineering and Technology China University of Geosciences (Beijing) Beijing 100083 China

Abstract

AbstractUltraviolet (UV) photodetectors have attracted extensive attention in various applications, including aerospace, optical communication, and fire warning. However, the intrinsic coupling of high responsivity and fast response as well as imperfect interface transmission impede the further improvement of UV photodetector. Here, a high‐performance Au‐decorated PbI2/ZnO pn junction UV photodetector with a one‐dimensional (1D) and two‐dimensional (2D) interspersed structure is presented. The pyro‐phototronic effect and energy band engineering effect from the localized pn junction generated by the layered p‐type PbI2 nanosheets along the c‐axis of ZnO are coupled to modulate the separation and transport of photogenerated carriers. Furthermore, the localized surface plasmon resonance of Au nanoparticles produces transient thermal power to raise temperature fast to enhance pyroelectric current. The self‐powered Au@PbI2/ZnO photodetector displays a high responsivity of 0.21 A W−1, excellent detectivity of 7.9 × 1012 Jones, and fast response/recovery time of 25/31 ms, under the illumination of 325 nm light with the power density of 0.08 µW cm−2. This work offers an effective strategy for designing high‐performance next‐generation optoelectronic devices.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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