A Facile Method Based on Oxide Semiconductor Reduction for Controlling the Photoresponse Characteristic of Flexible and Transparent Optoelectronic Devices-Reference-Cited by-同舟云学术

A Facile Method Based on Oxide Semiconductor Reduction for Controlling the Photoresponse Characteristic of Flexible and Transparent Optoelectronic Devices

Published:2021-08-15 Issue:21 Volume:9 Page:2100725
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Kim Min Seong¹,Jung Joohye¹²,Kim Hyung Tae¹,Choi Dong Hyun¹,Jung Sujin¹,Kim Hyun Jae¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering Yonsei University 50 Yonsei‐ro, Seodaemun‐gu Seoul 03722 Republic of Korea

2. Display R&D Center Samsung Display Co., Ltd 181 Samsung‐ro, Tangjeong‐myeon Asan‐Si, Chungcheongnam‑do 31454 Republic of Korea

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202100725

Reference56 articles.

1. An experimental and theoretical study on soft chemically grown CuS thin film for photosensor application

2. Smart home multi-device bidirectional visible light communication

3. Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors

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