Formation of van der Waals Stacked p–n Homojunction Optoelectronic Device of Multilayered ReSe <sub>2</sub> by Cr Doping-Reference-Cited by-同舟云学术

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Formation of van der Waals Stacked p–n Homojunction Optoelectronic Device of Multilayered ReSe ₂ by Cr Doping

Published:2022-05 Issue:13 Volume:10 Page:2200392
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Rosyadi Adzilah Shahna¹,Chan Alvin Hsien‐Yi¹,Li Jia‐Xin²,Liu Chang‐Hua²,Ho Ching‐Hwa¹³^ORCID

Affiliation:

1. Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei 106 Taiwan

2. Institute of Photonics Technology and Department of Electrical Engineering National Tsing Hua University Hsinchu 300 Taiwan

3. College of Applied Science National Taiwan University of Science and Technology Taipei 106 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202200392

Reference56 articles.

1. Integration of bulk materials with two-dimensional materials for physical coupling and applications

2. Solution-processable 2D semiconductors for high-performance large-area electronics

3. High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

4. Recent progress in ultrathin two-dimensional semiconductors for photocatalysis

5. Flexible Device Applications of 2D Semiconductors

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1. Axially‐Polarized Excitonic Series and Anisotropic van der Waals Stacked Heterojunction in a Quasi‐1D Layered Transition‐Metal Trichalcogenide;Advanced Science;2024-08-05

2. Behavior of iron deposition on the surface structure and electrical properties of CrBr3 by scanning tunneling microscopy and spectroscopy;Thin Solid Films;2024-07

3. Structural, optical and electrical properties in multilayer SnS2(1-x)Se2(x) compounds for energy, thermoelectric and photocatalytic application;Materials Today Advances;2024-06

4. Unveiling the potential of vanadium-doped CVD-grown p-type MoS2 in vertical homojunction UV–Vis photodiodes;Materials Today Physics;2024-04

5. Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts;ACS Applied Materials & Interfaces;2024-03-06

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