Affiliation:
1. School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province Henan University Kaifeng 475004 P. R. China
2. Academy for Advanced Interdisciplinary Studies, School of Physics and Electronics Henan University Kaifeng 475004 P. R. China
3. Institute of Atomic Manufacturing Beihang University Beijing 100191 P. R. China
Abstract
AbstractThe emission of cyan light (470‐500 nm) plays a vital role in the visible light spectrum and is essential for applications such as lighting, displays, and optical communication. Inorganic cesium lead bromide perovskite quantum dots (CsPbBr3 PQDs) have made significant progress in the field of luminescence materials and devices, however, the lack of techniques to obtain highly emissive and stable cyan‐emitting CsPbBr3 PQDs has limited their device applications. Here, it is demonstrated that the complete surface passivation by treatment of didodecyldimethylammonium bromide (DDAB) and lead bromide, which can enhance the photoluminescence and stability of cyan emitting CsPbBr3 PQDs. In particular, the photoluminescence quantum yield of CsPbBr3 QDs can be greatly improved from 10.5% to 83.8%. Through an effective PMMA passivation, the obtained stable and bright CsPbBr3 PQDs composite films as the cyan color converters can effectively emit the cyan light to fill the “cyan gap” of white light‐emitting diode (WLED). The color rendering index value of such WLED is remarkably enhanced from 73.6 to 82.5. This study paves the way for the application of PQD color converters in the next generation of full‐visible‐spectrum WLED lighting.
Funder
National Natural Science Foundation of China
Key Scientific Research Project of Colleges and Universities in Henan Province
Cited by
6 articles.
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