Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor-Reference-Cited by-同舟云学术

Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor

Published:2022-02-09 Issue:7 Volume:8 Page:2101112
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Muhammad Zahir¹^ORCID,Li Yuliang²,Abbas Ghulam³⁴,Usman Muhammad⁵,Sun Zhe²,Zhang Yue¹,Lv Ziyu⁵,Wang Yan¹,Zhao Weisheng¹

Affiliation:

1. Hefei Innovation Research Institute, School of Microelectronics Beihang University Hefei 230013 P. R. China

2. National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei 230029 P. R. China

3. Division of Machine Elements, Luleå University of Technology Luleå 97187 Sweden

4. Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics Luleå University of Technology Luleå 97187 Sweden

5. College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101112

Reference69 articles.

1. Rationally Designing High-Performance Bulk Thermoelectric Materials

2. Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity

3. 2D Materials for Large‐Area Flexible Thermoelectric Devices

4. Seeking new, highly effective thermoelectrics

5. High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

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