Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing-Reference-Cited by-同舟云学术

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Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing

Published:2022-09-23 Issue:12 Volume:8 Page:2200810
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Lee Byeong Hyeon¹²,Lee Ji Ye²³,Kumar Akash²⁴,Lee Sang Yeol²⁴^ORCID

Affiliation:

1. Department of Microdevice Engineering Korea University Seoul 136–701 Korea

2. Gachon Advanced Institute of Semiconductor Technology Seongnam 13120 Korea

3. Department of Electrical Engineering Korea University Seoul 136–701 Korea

4. Department of Electronic Engineering Gachon University Seongnam 13120 Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200810

Reference43 articles.

1. Wireless battery-free wearable sweat sensor powered by human motion

2. Mimicking Human and Biological Skins for Multifunctional Skin Electronics

3. First draft of a report on the EDVAC

4. Spike-Driven Synaptic Plasticity: Theory, Simulation, VLSI Implementation

5. Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. All-Solid-State Synaptic Transistors with Lithium-Ion-Based Electrolytes for Linear Weight Mapping and Update in Neuromorphic Computing Systems;ACS Applied Materials & Interfaces;2023-10-02

2. Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse;ACS Nano;2023-08-23

3. Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity;Advanced Electronic Materials;2023-06-20

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