Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe 2-Reference-Cited by-同舟云学术

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Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe 2

Published:2020-07-19 Issue:9 Volume:6 Page:2000479
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hong Sungjae¹,Kim Kang Lib²,Cho Yongjae¹,Cho Hyunmin¹,Park Ji Hoon¹,Park Cheolmin²,Im Seongil¹^ORCID

Affiliation:

1. Van der Waals Materials Research Center Department of Physics Yonsei University 50 Yonsei‐ro Seodaemun‐gu Seoul 03722 Republic of Korea

2. Department of Materials Science and Engineering Yonsei University 50 Yonsei‐ro Seodaemun‐gu Seoul 03722 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Ministry of Education

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000479

Reference52 articles.

1. Single-layer MoS2 transistors

2. Large scale MoS 2 nanosheet logic circuits integrated by photolithography on glass

3. Exfoliated multilayer MoTe2 field-effect transistors

4. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

5. Transition metal dichalcogenide heterojunction PN diode toward ultimate photovoltaic benefits

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1. Contact Properties on a Semiconducting MoTe₂ Crystal Using Polymorphic Structures;ACS Applied Electronic Materials;2024-09-10

2. MoS₂/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters;Advanced Functional Materials;2024-09-06

3. Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor;ACS Nano;2024-05-15

4. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors;Nanotechnology;2023-11-10

5. High-Performance C₆₀ Coupled Ferroelectric Enhanced MoS₂ Nonvolatile Memory;ACS Applied Materials & Interfaces;2023-03-27

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