Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

Author:

Meng Dequan1,Chen Shiwei1,Ren Chuantong1,Li Jiaxu2,Lan Guibin3,Li Chaozhong4,Liu Yong5,Su Yurong1,Yu Guoqiang3,Chai Guozhi4,Xiong Rui5,Zhao Weisheng2,Yang Guang2ORCID,Liang Shiheng1

Affiliation:

1. Key Laboratory for Intelligent Sensing System and Security of Ministry of Education Hubei University Wuhan 430062 China

2. Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China

3. Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

4. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education Lanzhou University Lanzhou 730000 China

5. Key Laboratory for Artificial Micro‐ and Nano‐structures of Ministry of Education School of Physics and Technology Wuhan University Wuhan 430072 China

Abstract

AbstractThe utilization of novel noncollinear antiferromagnetic materials holds great promise for the development of energy‐efficient spintronic devices. However, only a few studies have reported on the all‐electrical control of perpendicular magnetization switching using noncollinear antiferromagnets as the spin source, and the underlying mechanism behind the unconventional spin‐orbit torque (SOT) is still a topic of debate. In this work, deterministic perpendicular magnetization switching in Mn3Sn/CoTb bilayers is successfully achieved. Compared to the control samples with heavy metal as the spin source, the critical switching current density is over one order of magnitude reduced, indicating an enhanced efficiency of the out‐of‐plane charge‐to‐spin conversion in the textured Mn3Sn films. The influence of film thickness and growth temperature on the efficiency of different spin polarizations suggests potential roles of crystal quality and spin texture in spin diffusion with different spin polarization directions. These findings provide valuable insights into the crystal structure, spin‐orbit torque effects, and charge‐to‐spin conversion in Mn3Sn films, highlighting the importance of understanding interface and bulk contributions in antiferromagnetic spin transport phenomena.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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