Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors

Published:2020-11-30 Issue:1 Volume:7 Page:2000778
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Jin Wei¹,Xu Mingsheng¹,Zhou Xiaojie¹,Wang Jiao¹,Cai Yichen¹,Jawad Husnain¹,Yan Mengge²,Tian Bobo²,Nie Qingmiao³,Yan Bo³,Cong Chunxiao¹,Qiu Zhi‐Jun¹,Liu Ran¹,Hu Laigui¹^ORCID

Affiliation:

1. State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China

2. Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University Shanghai 200241 China

3. College of Science Zhejiang University of Technology Hangzhou 310023 China

Funder

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000778

Reference30 articles.

1. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

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4. High-Contrast Photoswitching of Nonlinear Optical Response in Crosslinked Ferroelectric Liquid-Crystalline Polymers

5. Ferroelectric materials for piezoelectric actuators by optimal design

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