Affiliation:
1. Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
2. Department of Chemistry Korea University Seoul 136‐713 South Korea
3. Department of Chemistry Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
4. Academy for Advanced Interdisciplinary Studies Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
5. Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China
Abstract
AbstractPolythiophenes, built on head‐to‐head (HH) linked 3,3′‐oligomer ethylene glycol‐2,2′‐bithiophene (gT2), have simple chemical structure, good backbone planarity, and relatively high‐lying the lowest unoccupied molecular orbital (LUMO) energy levels, hence showing excellent p‐type performance in organic electrochemical transistors (OECTs) with µC* of several hundred F cm−1 V−1 s−1. In this study, sequential cyano substitution is utilized to enable transformation of charge carrier polarity from p‐type to n‐type in OECTs, based on the parent polythiophene g4T2‐T2. With the increase of cyano group number, the polythiophenes exhibit gradually lowered LUMO levels from −2.55 to −3.90 eV. As a result, from g4T2‐T2 to CNg4T2‐CNT2, the p‐type performance dramatically diminishes accomplished by the enhancement of n‐type one when applied in OECTs. To the authors' delight, polymer CNg4T2‐CNT2 with the highest content of cyano groups exhibits a remarkable n‐type µC* of 27.01 F cm−1 V−1 s−1 and high gm,norm of 6.75 S cm−1 with negligible p‐type character. This study demonstrates that sequential cyano substitution provides a powerful approach for developing high‐performance n‐type polymers for OECT applications.
Funder
Songshan Lake Materials Laboratory
National Natural Science Foundation of China
National Research Foundation of Korea
Subject
Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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