Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer-Reference-Cited by-同舟云学术

Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer

Published:2020-08-18 Issue:10 Volume:6 Page:2000584
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hu Shuai¹,Yang Huanglin¹,Tang Meng¹,Chen Huanjian¹,Yang Yumeng²,Zhou Shiming¹,Qiu Xuepeng¹^ORCID

Affiliation:

1. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering Tongji University Shanghai 200092 China

2. School of Information Science and Technology ShanghaiTech University Shanghai 201210 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000584

Reference46 articles.

1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films

2. Nanoionics-based resistive switching memories

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Direct Identification of the Conducting Channels in a Functioning Memristive Device

5. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

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