Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance-Reference-Cited by-同舟云学术

Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance

Published:2022-05-13 Issue:9 Volume:8 Page:2200003
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Pan Quanjun¹^ORCID,Liu Yuting²³,Wu Hao¹⁴,Zhang Peng¹,Huang Hanshen¹,Eckberg Christopher¹⁵⁶⁷,Che Xiaoyu¹,Wu Yingying¹,Dai Bingqian¹,Shao Qiming³^ORCID,Wang Kang L.⁸^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering University of California Los Angeles CA 90095 USA

2. School of Material Science and Engineering Harbin Institute of Technology Shenzhen Guangdong 518055 China

3. Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China

4. Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China

5. Fibertek Inc. Herndon VA 20171 USA

6. US Army Research Laboratory Adelphi MD 20783 USA

7. US Army Research Laboratory Playa Vista CA 90094 USA

8. Department of Electrical and Computer Engineering Department of Physics and Astronomy and Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA

Funder

Army Research Office

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200003

Reference62 articles.

1. Electric-Field Control of Spin-Orbit Interaction for Low-Power Spintronics

2. Low-power non-volatile spintronic memory: STT-RAM and beyond