Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion-Reference-Cited by-同舟云学术

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Published:2021-12-28 Issue: Volume: Page:2100999
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Mazumder Aishani¹,Ahmed Taimur¹²³,Mayes Edwin⁴,Tawfik Sherif Abdulkader⁵⁶,Russo Salvy P.⁶⁷,Low Mei Xian¹²,Ranjan Abhishek⁸,Balendhran Sivacarendran⁹,Walia Sumeet¹²^ORCID

Affiliation:

1. School of Engineering RMIT University 124 La Trobe Street Melbourne 3000 Australia

2. Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University Melbourne 3000 Australia

3. Pak‐Austria Fachhochschule Institute of Applied Sciences and Technology Haripur 22620 Pakistan

4. School of Science RMIT University 124 La Trobe Street Melbourne 3000 Australia

5. Institute for Frontier Materials Deakin University Geelong 3216 Australia

6. ARC Centre of Excellence in Exciton Science School of Science RMIT University Melbourne 3000 Australia

7. Chemical and Quantum Physics School of Science RMIT University Melbourne 3000 Australia

8. School of Engineering Sapienza University of Rome Piazzale Aldo Moro, 5 Roma 00185 Italy

9. School of Physics The University of Melbourne Parkville 3010 Australia

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100999

Reference53 articles.

1. Understanding memristive switching via in situ characterization and device modeling

2. Fully memristive neural networks for pattern classification with unsupervised learning

3. A general memristor-based partial differential equation solver

4. Reversible resistive switching behaviour in CVD grown, large area MoOx

5. Memristive devices based on emerging two-dimensional materials beyond graphene

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