Probing the Spin Hall Characteristics of W/CoFeB/MgO Based Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access Memory Application-Reference-Cited by-同舟云学术

Probing the Spin Hall Characteristics of W/CoFeB/MgO Based Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access Memory Application

Published:2021-12-29 Issue: Volume: Page:2100982
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Ghosh Abhijit¹^ORCID,Chung Hong Jing¹,Khoo Khoong Hong²^ORCID,Shanmugam Janaki¹^ORCID,Qiu Jinjun¹,Allauddin Salauddeen¹,Lim Sze Ter¹^ORCID

Affiliation:

1. Institute of Materials Research and Engineering Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way, #08‐03 Innovis, 138634 Singapore

2. Institute of High Performance Computing A*STAR 1 Fusionopolis Way, 138632 Singapore

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100982

Reference56 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2. Spin-Torque Ferromagnetic Resonance Induced by the Spin Hall Effect

3. Spin Hall effects

4. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

5. Ultrafast magnetization switching by spin-orbit torques

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