Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon-Reference-Cited by-同舟云学术

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Published:2021-10-25 Issue:1 Volume:8 Page:2100777
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Rio Calvo Marta¹,Rodriguez Jean‐Baptiste¹^ORCID,Cornet Charles²^ORCID,Cerutti Laurent¹^ORCID,Ramonda Michel³,Trampert Achim⁴^ORCID,Patriarche Gilles⁵^ORCID,Tournié Éric¹^ORCID

Affiliation:

1. IES University of Montpellier CNRS Montpellier F‐ 34000 France

2. Univ Rennes INSA Rennes CNRS Institut FOTON – UMR 6082 Rennes F‐35000 France

3. CTM University of Montpellier Montpellier F‐ 34000 France

4. Paul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5–7 10117 Berlin Germany

5. Université Paris‐Saclay CNRS Centre de Nanosciences et de Nanotechnologies Palaiseau 91120 France

Funder

European Regional Development Fund

Agence Nationale de la Recherche

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100777

Reference62 articles.

1. W.Arden M.Brillouët P.Cogez M.Graef B.Huizing R.Mahnkopf “‘More‐than‐Moore’ White Paper ”https://go.nature.com/2BAMo7LITRS 2010.

2. All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm

3. Review of silicon photonics: history and recent advances

4. Attojoule Optoelectronics for Low-Energy Information Processing and Communications

5. Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al x Ga 1− x As y P 1− y Step‐Graded Buffer Structures

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