Logic‐In‐Memory Characteristics of Reconfigurable Feedback Field‐Effect Transistors with Double‐Gated Structure

Abstract

AbstractThe reconfigurable feedback field‐effect transistors (R‐FBFETs) with a double‐gated structure are designed and the logic and memory operations of a logic‐in‐memory (LIM) inverter comprising two R‐FBFETs are investigated. The R‐FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec−1, a high on/off current ratio of ≈107, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on‐current ratio of the p‐ to n‐channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero‐bias conditions. The symmetric reconfigurable switching and memory operations of the R‐FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.