Photoinduced Synaptic Behavior of In x Ti y O Thin Film Transistors-Reference-Cited by-同舟云学术

Photoinduced Synaptic Behavior of In x Ti y O Thin Film Transistors

Published:2021-03-16 Issue:4 Volume:7 Page:2001049
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lim Jung Wook¹²^ORCID,Kim Taeyoon¹²,Kim Jieun¹²,Yun Sun Jin¹²,Jung Kwang Hoon²,Park Min A²

Affiliation:

1. ICT Materials Research Group Materials & Components Basic Research Division Electronics and Telecommunications Research Institute (ETRI) 218 Gajeong‐ro Yuseong‐gu Daejeon 305–700 South Korea

2. Department of Advanced Device Engineering University of Science and Technology 217 Gajeong‐ro Yuseong‐gu Daejeon 305–350 South Korea

Funder

Electronics and Telecommunications Research Institute

Institute for Information and Communications Technology Promotion

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001049

Reference32 articles.

1. Recent Advances in Transistor‐Based Artificial Synapses

2. Recent Progress in Three‐Terminal Artificial Synapses: From Device to System

3. A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor

4. Optogenetics-Inspired Tunable Synaptic Functions in Memristors

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