Uniform Tendency of Surface Dipoles Across Silicon Doping Levels and Types of H‐Terminated Surfaces

Author:

Harilal Sherina1,Sadhujan Sumesh1,Zhang Kefan1,Shalabny Awad1,Buonocore Francesco2,Ferrucci Barbara3,Giusepponi Simone2,Celino Massimo2,Bashouti Muhammad Y.14ORCID

Affiliation:

1. Department of Solar Energy and Environmental Physics Swiss Institute for Dryland Environmental and Energy Research J. Blaustein Institutes for Desert Research Midreshet Ben‐Gurion Ben‐Gurion University of the Negev Building 26 Midreshet Ben‐Gurion 8499000 Israel

2. ENEA C. R. Casaccia via Anguillarese 301 Rome 00123 Italy

3. ENEA C. R. Bologna Via Martiri di Monte Sole 4 Bologna 40129 Italy

4. The Ilse‐Katz Institute for Nanoscale Science & Technology Beer‐Sheba Campus Ben‐Gurion University of the Negev POB 653, Building 51 Beer‐Sheba 8410501 Israel

Abstract

AbstractThe termination of surface‐dangling bonds on silicon through hydrogen atoms, also known as Si–H, can achieve chemical passivation and reduce surface states in the electronic bandgap, thus altering electronic properties. Through a comprehensive study of doping levels (1014–1020 cm−3) and types (n and p), a consistent surface dipole trend induced by Si–H termination is discovered. It is achieved by redistributing surface charges and establishing thermal equilibrium with the chemical bond. To resolve this, the surface work function, surface electron affinity, and the energy difference between the valence band and the Fermi level are measured by employing the Kelvin probe, X‐ray photoelectron spectroscopy, and photoelectron yield spectroscopy methods. These findings are further validated through ab initio simulations. This finding has immense implications not only for eliminating electronic defects at semiconductor interfaces, which is crucial in microelectronics but also for developing and engineering hybrid interfaces and heterojunctions with controlled electronic properties.

Funder

Israel Science Foundation

Israel Innovation Authority

Publisher

Wiley

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