Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory-Reference-Cited by-同舟云学术

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Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory

Published:2022-01-17 Issue:5 Volume:8 Page:2101083
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Jin Soo‐Min¹,Kim Hea‐Jee¹,Woo Dae‐Seong¹,Jung Sung‐Mok¹,Kim Dong‐Eon²,Shim Tae‐Hun³,Park Jea‐Gun¹²³^ORCID

Affiliation:

1. Department of Nano‐scale Semiconductor Engineering Hanyang University Seoul 04763 Republic of Korea

2. Department of Electronic Engineering Hanyang University Seoul 04763 Republic of Korea

3. Advanced Semiconductor Materials and Devices Development Center Hanyang University Seoul 04763 Republic of Korea

Funder

Korea Semiconductor Research Consortium

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101083

Reference60 articles.

1. Storage-class memory: The next storage system technology

2. Evaluation of intel 3D-xpoint NVDIMM technology for memory-intensive genomic workloads

3. 3D cross-point phase-change memory for storage-class memory

4. Phase-Change Memory—Towards a Storage-Class Memory

5. Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Overview of amorphous carbon memristor device, modeling, and applications for neuromorphic computing;Nanotechnology Reviews;2024-01-01

2. Design of Ultra-High Density Archival Storage Memory with Nanoprobe and Patterned Oxygenated Amorphous Carbon with Metal Nanoclusters;Journal of Nanoelectronics and Optoelectronics;2024-01-01

3. Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching;Advanced Electronic Materials;2023-01-19

4. Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi ₂ I ₇ /ITO Structure;Advanced Materials Interfaces;2022-05-12

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