Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe 2-Reference-Cited by-同舟云学术

Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe 2

Author:

Jian Jiaying¹²³^ORCID,Feng Hao²,Dong Pengfan²,Chang Honglong³,Vena Arnaud⁴,Brice Sorli⁴

Affiliation:

1. School of Electronic Information and Engineering Xi'an Technological University Xi'an 710021 P. R. China

2. Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices Xi'an Technological University Xi'an 710021 P. R. China

3. School of Mechanical Engineering Northwestern Polytechnical University Xi'an 710072 P. R. China

4. Institute of Electronics and Systems University of Montpellier Montpellier 34095 France

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference44 articles.

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