Affiliation:
1. Institute of Glass and Ceramic Department of Materials Science and Engineering Friedrich‐Alexander‐Universität Erlangen‐Nürnberg (FAU) 91058 Erlangen Germany
2. Microelectronics Research Unit Faculty of Information Technology and Electrical Engineering University of Oulu Oulu 90570 Finland
3. Lehrstuhl für Physikalische Chemie II Friedrich‐Alexander‐Universität Erlangen‐Nürnberg (FAU) 91058 Erlangen Germany
4. Angewandte Physikalische Chemie Freie Universität Berlin 14195 Berlin Germany
Abstract
AbstractRecent research has found that by introducing A‐site deficiency into Ba/Ni co‐doped (K,Na)NbO3 ABO3‐type perovskite, a beneficial interface for photoferroelectric applications is formed between the perovskite and tungsten bronze (TB) phases. To date, such an interface is formed only spontaneously, and the growth mechanism of the TB phase in the perovskite phase is unclear. This work investigates controlled interface formation using KNBNNO (K0.50Na0.44Ba0.04Ni0.02Nb0.98O2.98) annealed at different temperatures for different durations, and in various atmospheres. Structural, microstructural, and chemical analyses suggest that vacuum, N2, and O2 atmospheres promote the growth of the TB phase from the sample surface, of which the thickness increases with annealing temperature and duration. In contrast, annealing in air does not promote such growth due to lower evaporation of K and Na. Among all atmospheres, the growth starts the earliest, i.e., at 800 °C, in vacuum compared to that as late as 1000 °C in O2. The association of growth of the TB phase with the degree of alkali volatilization that is dependent on the atmosphere, and that with the resultant variation in diffusion rate, uncovers the formation mechanism of the beneficial interface that may also be applicable to other KNN‐based materials for advanced photoferroelectric applications.
Funder
Academy of Finland
Deutsche Forschungsgemeinschaft
Subject
Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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