Metal–Insulator Transition Driven by Traps in 2D WSe <sub>2</sub> Field‐Effect Transistor-Reference-Cited by-同舟云学术

Metal–Insulator Transition Driven by Traps in 2D WSe ₂ Field‐Effect Transistor

Published:2022-03-29 Issue:9 Volume:8 Page:2200046
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Ali Fida¹,Ali Nasir¹,Taqi Muhammad¹,Ngo Tien Dat¹,Lee Myeongjin¹,Choi Hyungyu¹,Park Won‐Kyu¹,Hwang Euyheon¹,Yoo Won Jong¹

Affiliation:

1. Department of Nano Science and Technology SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University 2066, Seobu‐ro, Jangan‐gu Suwon Gyeonggi‐do 16419 South Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200046

Reference53 articles.

1. Disorder in van der Waals heterostructures of 2D materials

2. Dielectric disorder in two-dimensional materials

3. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

4. Recent progress in 2D group-VA semiconductors: from theory to experiment

5. 2D V‐V Binary Materials: Status and Challenges

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