Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias-Reference-Cited by-同舟云学术

Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias

Published:2021-10-22 Issue:1 Volume:8 Page:2100805
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

González‐Ruano César¹,Tiusan Coriolan²³⁴,Hehn Michel⁴,Aliev Farkhad G.¹^ORCID

Affiliation:

1. Departamento Física de la Materia Condensada C‐III, INC and IFIMAC Universidad Autónoma de Madrid Madrid 28049 Spain

2. Department of Physics and Chemistry Center of Superconductivity Spintronics and Surface Science C4S Technical University of Cluj‐Napoca Cluj‐Napoca 400114 Romania

3. Department of Solid State Physics and Advanced Technology Faculty of Physics Babes‐Bolyai University Cluj‐Napoca 400114 Romania

4. Institut Jean Lamour Nancy Universitè Vandoeuvre‐les‐Nancy Cedex 54506 France

Funder

Ministerio de Ciencia e Innovación

Consejería de Educación e Investigación

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100805

Reference31 articles.

1. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

2. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

3. Programmable computing with a single magnetoresistive element

4. Magnetic sensors and their applications

5. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

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