Transparent Conducting TiO2 Thin Film Induced by Electric‐Field Controlled Hydrogen Ion Intercalation

Author:

Wang Yuqian12,Cai Guanghui12,Chen Zhanfen13,Peng Huining4,Zhang Qinghua1,Gao Lei1,Zhu Mingtong12,Lyu Xiangyu15,Lu Chao1,Liu Jin12,Li Mengcheng1,Liang Keyue1,Liu Pengyu1,Wang Lu1,Tao Huayu15,Song Jiayi12,Wang Qiang1,Ji Ailing12,Liu Miao16,Li Chaorong3,Gu Lin7,Yu Pu48,Cao Zexian16,Lu Nianpeng16ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

2. School of Physical Sciences University of Chinese Academy of Sciences Beijing 100190 China

3. Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci‐Tech University Hangzhou 310018 China

4. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China

5. College of Materials Science and Opto‐Electronic Technology University of Chinese Academy of Sciences Beijing 101408 China

6. Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China

7. School of Materials Science and Engineering Tsinghua University Beijing 100084 China

8. Frontier Science Center for Quantum Information Beijing 100084 China

Abstract

AbstractRealizing transformation from transparent insulating to transparent conducting, is a pursuing goal in designing and fabricating novel optoelectronic materials and devices. Here, a pronounced insulating to metal transition in anatase TiO2 thin films is achieved through ionic liquid gating, and interestingly the material maintains an invariable high optical transparency. It is revealed that the emergent metallic state can be attributed to the electron doping associated with the hydrogen ion intercalation. Importantly, the hydrogenation leads to the almost rigid shift of the Fermi energy and therefore maintains nicely the transparency at the visible light region. This result is in strong contrast with the case of oxygen vacancy doping, in which the optical bandgap is suppressed due to improved orbitals hybridization and intraband transition. Moreover, through synergistic ion‐electron doping, the selective control of the gating area and pattern is realized in the micrometer or even nanometer scale with extremely distinct physical properties, which can be employed to fabricate novel optical and electronic devices. The result greatly deepens the understanding of the underlying physics and formation mechanism of transparent conducting oxide (TCO) materials. It is envisioned that this work would provide a new pathway to design other potential optoelectronic materials with novel functionalities.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

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