Affiliation:
1. State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun 130022 China
2. Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV‐Emitting Materials and Technology of Ministry of Education Northeast Normal University 5268 Renmin Street Changchun 130024 China
Abstract
AbstractLight‐triggered synaptic plasticity (LTSP) induced by electron trapping in organic photoelectric synaptic transistors (OPSTs) offers potential prospects in neuromorphic wearable artificial intelligence. However, a consistent and universal comprehend for LTSP behaviors especially on oxygen effect in OPSTs is still a critical challenge hindering their practical applications. A mechanism on strong dependency between the oxygen‐induced and polar‐group electron trapping in OPSTs, is successfully unveiled in this study for the first time. And the interaction between the oxygen and polar dielectric interface can be enhanced by properly modulating the specific surface area of thin‐film semiconductors. This effectively binds the oxygen near conducting channel and further improves the trapping efficiency for photogenerated electrons, undergoing the time‐dependent photocurrent generation and subsequent prolonged decay, forming the typical LTSP behaviors. These experimental demonstrations differ from previous reports and therefore may contribute an innovative perspective in the design of functional layers for high‐performance OPST devices.
Funder
China Postdoctoral Science Foundation
Natural Science Foundation of Jilin Province
National Basic Research Program of China
National Natural Science Foundation of China
Higher Education Discipline Innovation Project
Fundamental Research Funds for the Central Universities
Cited by
1 articles.
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