Tunneling‐Effect‐Boosted Interfacial Charge Trapping toward Photo‐Organic Transistor Memory-Reference-Cited by-同舟云学术

Tunneling‐Effect‐Boosted Interfacial Charge Trapping toward Photo‐Organic Transistor Memory

Published:2022-03-02 Issue:7 Volume:8 Page:2101349
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Wei Zi‐Yuan¹,Prakoso Suhendro Purbo¹^ORCID,Li Yen‐Ting¹,Chiu Yu‐Cheng¹^ORCID

Affiliation:

1. Department of Chemical Engineering National Taiwan University of Science and Technology No.43, Sec. 4, Keelung Road, Da'an District Taipei City 10607 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Ministry of Education

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101349

Reference59 articles.

1. A Wavelength‐Tunable Multi‐Functional Transistor with Visible‐Light Detection and Inverse Photomemory for Logic Gate and Retina Emulation

2. Photomemory and Pulse Monitoring Featured Solution‐Processed Near‐Infrared Graphene/Organic Phototransistor with Detectivity of 2.4 × 10 13 Jones

3. Nonvolatile Perovskite-Based Photomemory with a Multilevel Memory Behavior

4. Multilevel Photonic Transistor Memory Devices Using Conjugated/Insulated Polymer Blend Electrets

5. Novel Photoinduced Recovery of OFET Memories Based on Ambipolar Polymer Electret for Photorecorder Application

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