Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration
Author:
Affiliation:
1. Dipartimento di Elettronica Informazione e Bioingegneria (DEIB) Politecnico di Milano and IUNET piazza L. da Vinci 32 Milano 20133 Italy
2. Weebit Nano Hod Hasharon 45130 Israel
Funder
Horizon 2020 Framework Programme
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101161
Reference45 articles.
1. Nanoionics-based resistive switching memories
2. H.‐S. P.Wong H.‐Y.Lee S.Yu Y.‐S.Chen Y.Wu P.‐S.Chen B.Lee F. T.Chen M.‐J.Tsai Proc. IEEE2012 100 158.
3. Low current resistive switching in Cu–SiO2 cells
4. Phase Change Materials and Their Application to Nonvolatile Memories
5. Storage-class memory: The next storage system technology
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