Affiliation:
1. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. China
2. University of Chinese Academy of Sciences Beijing 100049 P. R. China
3. College of Optical and Electronic Technology China Jiliang University Hangzhou 310018 P. R. China
Abstract
AbstractRoom‐temperature blackbody‐sensitive infrared photodetectors with ultra‐broadband and ultrafast photoresponses are highly desired in numerous scientific and technical fields. However, it is challenging for an infrared photodetector to simultaneously possess all the aforementioned characteristics. In this study, a room‐temperature Te/PtSe2 heterostructure photodetector is established to address this challenge, utilizing the built‐in field of the heterostructure, the crossing conduction and valence bands of PtSe2, the high mobilities of both materials, and a considerable photogain. The device is photoresponsive over the ultrabroad wavelength range (519 nm–10 µm). The peak responsivity and specific detectivity reach 196.8 A W−1, and 4.3 × 109 cm Hz1/2 W−1, respectively, at the wavelength of 3.32 µm. The device also exhibits blackbody sensitivity, with a responsivity of 24.8 A W−1, and a specific detectivity of 7.4 × 108 cm Hz1/2 W−1. The photoresponse is ultrafast, corresponding to a 3 dB bandwidth of 160 kHz. The study provides new possibilities for high‐performance room‐temperature infrared detection.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Program of Shanghai Academic Research Leader