Ultrathin Al‐Assisted Al 2 O 3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter
Author:
Affiliation:
1. Department of Advanced Materials and Science Engineering Sungkyunkwan University Suwon 16419 Republic of Korea
2. Department of Electrical and Computer Engineering The University of Texas at Austin Austin TX 78758 USA
Funder
National Research Foundation of Korea
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101012
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1. Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide;ACS Applied Materials & Interfaces;2023-09-15
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