Nonvolatile Memory and Artificial Synaptic Characteristics in Thin‐Film Transistors with Atomic Layer Deposited HfOx Gate Insulator and ZnO Channel Layer
Author:
Affiliation:
1. Department of Materials Science and Engineering Myongji University Yongin Gyeonggi‐do 17058 Republic of Korea
2. Department of Physics Myongji University Yongin Gyeonggi‐do 17058 Republic of Korea
Funder
Samsung
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000412
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3. Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor;ACS Applied Electronic Materials;2023-05-31
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