Enhancing Self‐Powered Terahertz Photodetection with VSe2 and Van Der Waals Heterostructure Integration via Photothermoelectric Effect

Author:

Jiang Mengjie12ORCID,Pan Xiaokai2,Zhang Kaixuan1,Tian Shijian1,Zhang Libo23,Han Li23,He Yuan2,Lv Xuyang1,Lan Shiqi1,Xing Huaizhong1,Wang Lin2

Affiliation:

1. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Department of Optoelectronic Science and Engineering Donghua University Shanghai 201620 China

2. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu‐tian Road Shanghai 200083 China

3. Hangzhou Institute for Advanced Study, College of Physics and Optoelectronic Engineering University of Chinese Academy of Sciences No. 1, Sub‐Lane Xiangshan, Xihu District Hangzhou 310024 China

Abstract

AbstractOwning unique optical and electronic properties, two dimensional (2D) materials have made remarkable strides in the field of photodetection applications. However, achieving highly sensitive and ultra‐broadband detection from microwave to terahertz (THz) range (0.02–0.54 THz) remains a significant challenge for photodetectors. This study presents a self‐powered THz photodetector based on VSe2 and its van der Waals heterostructure. The photoresponse of the photodetector is primarily attributed to the photothermoelectric effect. At room temperature, the device exhibits lower noise equivalent power values of 21 pW Hz−1/2 at 0.28 THz. This work has achieved ultra‐broadband detection and demonstrated the potential for large‐area imaging, providing a new avenue for the application of THz technology in nondestructive testing and biometric identification fields.

Funder

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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