Affiliation:
1. Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China
2. School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 China
3. State Key Laboratory of Low‐Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China
Abstract
AbstractElectrically manipulating the magnetization of insulators presents exciting opportunities for fast and energy‐efficient spintronic devices. However, the existing approaches, which rely on spin‐orbit torque (SOT), invariably require an auxiliary field. Here field‐free current‐induced magnetization switching in perpendicularly magnetized Tm3Fe5O12 films is demonstrated. This is achieved through a magnetic hybrid structure, Tm3Fe5O12/Co40Fe40B20/Cu/SiO2, where the Cu layer acts as the source of orbital current, and the in‐plane magnetized Co40Fe40B20 layer functions as the converter of orbital‐to‐spin current. The interplay between the insulating and metallic magnetic layers not only yields a significant anomalous Hall signal for monitoring the Tm3Fe5O12 magnetization states, but also enables field‐free switching that is immune to the magnetic history of the structure. It also observes similar Tm3Fe5O12 switching in stacks with different spin/orbital current sources, with the SOT‐driven switching consuming substantially more power. This work establishes a pathway for achieving energetically efficient all‐electrical manipulation of insulator spins through orbital currents.
Funder
National Natural Science Foundation of China
Subject
Electronic, Optical and Magnetic Materials