Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt Heterostructure-Reference-Cited by-同舟云学术

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr 0.2 Ti 0.8 O 3 /Co/Pt Heterostructure

Published:2020-04-20 Issue:6 Volume:6 Page:2000102
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Ren Zengyao¹,Wang Mengxi¹,Liu Pengfei¹,Liu Qi²,Wang Kaiyou³,Jakob Gehard⁴,Chen Jikun¹,Meng Kangkang¹,Xu Xiaoguang¹,Miao Jun¹^ORCID,Jiang Yong¹

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome EngineeringSchool of Materials Science and EngineeringUniversity of Science and Technology Beijing Beijing 100083 China

2. Department of PhysicsSouthern University of Science and Technology Shenzhen 518055 China

3. State Key Laboratory of Superlattices and MicrostructuresInstitute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

4. Johannes Gutenberg UniversityInstitute of Physics Mainz 55128 Germany

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000102

Reference36 articles.