Self‐Powered Perovskite Photodetector Arrays with Asymmetric Contacts for Imaging Applications

Abstract

AbstractDesigning photodetectors (PDs) with fast response and low power consumption is important for the realization of photoelectric conversion in photoelectric integrated systems. The emerging metal halide perovskite is proven to be a promising material for PD array devices due to its excellent photoelectric performance and large‐area production. However, the array integration of self‐powered perovskite PDs still faces challenges due to the incompatibility between perovskite and micro‐nano processing, hindering practical applications. Here, a perovskite‐compatible device fabrication process is reported for the construction of a perovskite PD array (10 × 10 pixels) with asymmetric contacts, enabling self‐powered photodetection and high‐performance imaging applications. Au and ITO/ZnO electrodes are deposited on the substrate in sequence as the asymmetric contacts. Patterned CH3NH3PbI3 films with uniform and pinhole‐free morphology are then synthesized by a photolithography‐assisted vapor–solution fabrication method as the photosensitive material. The introduction of asymmetric electrodes enables the easy collection of holes at the Au electrode side and electrons at the ITO/ZnO electrode side with light irradiation, resulting in self‐powered photodetection performance. Moreover, the PD array exhibits a uniform distribution of light response and is successfully demonstrated for light imaging. This work opens up a new avenue to develop large‐scale high‐performance perovskite optoelectronic devices with low power consumption.