Temperature‐Dependent Phase Transitions in Hf x Zr 1‐x O 2 Mixed Oxides: Indications of a Proper Ferroelectric Material

Author:

Schroeder Uwe1ORCID,Mittmann Terence1ORCID,Materano Monica1,Lomenzo Patrick D.1,Edgington Patrick2,Lee Young H.2,Alotaibi Meshari3,West Anthony R.3,Mikolajick Thomas14ORCID,Kersch Alfred5ORCID,Jones Jacob L.2ORCID

Affiliation:

1. Namlab gGmbH Noethnitzer Strasse 64a 01187 Dresden Germany

2. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695 USA

3. Department of Materials Science & Engineering University of Sheffield Sheffield S1 3JD UK

4. Chair of Nanoelectronics TU Dresden 01187 Dresden Germany

5. Department of Applied Sciences and Mechatronics Hochschule München 80335 München Germany

Funder

National Science Foundation

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Ferroelectricity in hafnium oxide thin films

2. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline

3. High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

4. S.Beyer S.Dunkel M.Trentzsch J.Muller A.Hellmich D.Utess J.Paul D.Kleimaier J.Pellerin S.Muller J.Ocker A.Benoist H.Zhou M.Mennenga M.Schuster F.Tassan M.Noack A.Pourkeramati F.Muller M.Lederer T.Ali R.Hoffmann T.Kampfe K.Seidel H.Mulaosmanovic E. T.Breyer T.Mikolajick S.Slesazeck In2020 IEEE International Memory Workshop (IMW) IEEE Dresden Germany 2020 pp.1–4.

5. New Low‐Energy Crystal Structures in ZrO 2 and HfO 2

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