Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors-Reference-Cited by-同舟云学术

Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors

Published:2021-12-10 Issue: Volume: Page:2101061
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Kim Jieun¹²^ORCID,Lim Jung Wook¹²^ORCID,Lee Jaehee¹²

Affiliation:

1. Application of Nano Emerging Materials Research Section Electronics and Telecommunications Research Institute (ETRI) 218 Gajeong‐ro, Yuseong‐gu Daejeon 34129 Republic of Korea

2. Department of Advanced Device Engineering University of Science and Technology (UST) 217 Gajeong‐ro, Yuseong‐gu Daejeon 34113 Republic of Korea

Funder

Electronics and Telecommunications Research Institute

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101061

Reference52 articles.

1. Emerging Artificial Synaptic Devices for Neuromorphic Computing

2. Recent Advances in Transistor‐Based Artificial Synapses

3. Synaptic electronics and neuromorphic computing

4. Recent Progress in Three‐Terminal Artificial Synapses: From Device to System

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral heterostructures of WS2 and MoS2 monolayers for photo-synaptic transistor;Scientific Reports;2024-03-22

2. Replicating the Bright-Light Therapy of Seasonal Affective Disorder Using Dual-Gate Dielectric Synaptic Transistors: An Exploration of Neuromorphic Computing Approaches;ACS Applied Electronic Materials;2024-02-28

3. Synaptic devices for simulating brain processes in visual-information perception to persisting memory through attention mechanisms;Materials Today Advances;2023-12

4. Lateral Heterostructures of WS2 and MoS2 Monolayers for Photo-Synaptic Transistor;2023-11-28

5. Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures;Biomimetics;2023-09-18