Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation-Reference-Cited by-同舟云学术

Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation

Published:2021-01-25 Issue:3 Volume:7 Page:2000872
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Emelianov Aleksei V.¹²^ORCID,Nekrasov Nikita P.¹,Moskotin Maksim V.¹³⁴,Fedorov Georgy E.⁴,Otero Nerea⁵,Romero Pablo M.⁵,Nevolin Vladimir K.¹,Afinogenov Boris I.¹⁶,Nasibulin Albert G.⁷⁸,Bobrinetskiy Ivan I.¹⁹

Affiliation:

1. National Research University of Electronic Technology 1 Shokin square, Moscow Zelenograd 124498 Russia

2. P. N. Lebedev Physical Institute of the Russian Academy of Sciences 53 Leninsky Prospect Moscow 119991 Russia

3. Moscow State University of Education 1/1 Malaya Pirogovskaya Street Moscow 119991 Russia

4. Moscow Institute of Physics and Technology 9 Institutskiy alley Dolgoprudny 141701 Russia

5. Laser Applications Centre AIMEN, 27A Calle Relva Porriño 36410 Spain

6. Faculty of Physics Moscow State University 1‐2 Leninskiye Gory, GSP‐1 Moscow 119991 Russia

7. Skolkovo Institute of Science and Technology 30/1 Bolshoy Boulevard Moscow 121205 Russia

8. Aalto University Department of Applied Physics 1B Otakaari Aalto 00076 Finland

9. BioSense Institute University of Novi Sad 1 Dr Zorana Djindjica Novi Sad 21000 Serbia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000872

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5. Global Photocurrent Generation in Phototransistors Based on Single‐Walled Carbon Nanotubes toward Highly Sensitive Infrared Detection

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