Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications-Reference-Cited by-同舟云学术

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Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications

Published:2022-02-11 Issue:10 Volume:8 Page:2101282
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Lee Minjong¹,Park Chang Yong¹,Sim Sangjun²,Lee Kimoon²,Lee Young Tack¹³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Inha University Incheon 22212 South Korea

2. Department of Physics Kunsan National University Gunsan 54150 South Korea

3. Department of Electronic Engineering Inha University Incheon 22212 South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101282

Reference53 articles.

1. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

2. Graphene transistors

3. Black phosphorus field-effect transistors

4. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

5. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

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3. Photo-switching operation of MoS₂ field effect transistor by photoisomerization of azobenzene in solution delivered on a microfluidic platform;Nanotechnology;2024-07-12

4. Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe₂ Transistors;ACS Applied Electronic Materials;2024-07-01

5. Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics;Micromachines;2024-01-22

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