Properties of silicon-anodic oxide interfaces
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference45 articles.
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and performance characteristics of thin films of SiO2;Microelectronics Journal;1988-11
2. Effects of Anodic Polarization Upon Electrochemically Grown Oxide Films on p-Si, Studied by Ellipsometric and Capacitance Measurements;Berichte der Bunsengesellschaft für physikalische Chemie;1985-02
3. Evolution of surface-states density of Si/wet thermal SiO2 interface during bias-temperature treatment;Solid-State Electronics;1977-11
4. Electrical and Optical Properties of MIS Devices;Semiconducting Devices;1976
5. Cole-cole plotting of surface state admittance in MIS capacitors;Physica Status Solidi (a);1971-12-16
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