The drift of charge carriers in Se—As layers-Reference-Cited by-同舟云学术

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The drift of charge carriers in Se—As layers

Published:1970-11-16 Issue:3 Volume:3 Page:K199-K202
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Montrimas E.,Pažera A.,Viščakas J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. and Vestnik LGU No. 10, 62 (1968).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective light-induced mass transport in amorphous As x Se 100−x films driven by the composition tuning: Effect of temperature on maximum acceleration;Journal of Non-Crystalline Solids;2018-08

2. Charge Carrier Transfer at High Electric Fields in Noncrystalline Semiconductors;Semiconductors and Semimetals;2004

3. Controlling the U −-center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens;Semiconductors;1999-07

4. Charge transport in films of amorphous arsenic triselenide;Journal of Non-Crystalline Solids;1972-06

5. Research progress in electrophotography in the U.S.S.R. and Eastern Europe;IEEE Transactions on Electron Devices;1972-04

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