MBE Growth of Ge-Based Diluted Magnetic Semiconductors-Reference-Cited by-同舟云学术

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MBE Growth of Ge-Based Diluted Magnetic Semiconductors

Published:2019-02-08 Issue: Volume: Page:349-364
ISSN:
Container-title:Molecular Beam Epitaxy
language:
Short-container-title:

Author:

Nie Tianxiao¹²,Tang Jianshi³,Wang Kang L.²

Affiliation:

1. Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering; Beihang University; Beijing 100191 China

2. Device Research Laboratory; Department of Electrical Engineering, University of California; Los Angeles, CA 90095 USA

3. IBM Thomas J. Watson Research Center; Yorktown Heights, NY 10598 USA

Publisher

John Wiley & Sons Ltd

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781119354987.ch21/fullpdf

Reference55 articles.

1. Magnetoresistive random access memory using magnetic tunnel junctions

2. A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

3. Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

5. Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars

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1. Specific effects of Cr3+ dopant ions on diluted magnetic semiconductor Sb2-xCrxTe3 quantum dots in a glass matrix;Ceramics International;2023-12

2. Structural, Magnetic and Vibrational Variations as a Function of Xmn-Concentration and Solubility Limit of Mn2+ Ions in Sb2-Xmnxte3 Nanocrystals;SSRN Electronic Journal;2022

3. Study of vibrational properties of Bi 2 − x Mn x Te 3 nanocrystals in host glass: Effect of xMn‐concentration;Journal of Raman Spectroscopy;2021-09-20

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