Affiliation:
1. School of Microelectronics Tianjin University Tianjin China
2. IPGoal Microelectronics Sichuan China
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. HeinemannB BarthR BolzeD et al. SiGe HBT Technology with fT/fmaxof 300 GHz/500 GHz and 2.0 ps CML gate delay. Paper presented at the IEEE International Electron Devices Meeting (IEDM) pp.30.5.1–30.5.4 December 6–8 2010.
2. Sibaja‐HernandezA VenegasR. et al. A 400 GHz fmaxfully self‐aligned SiGe:CHBT architecture. Paper presented at the IEEE Bipolar/BiCMOS Circuits and Technology Meeting pp.5–8 October 12–14 2009.
3. Full D-Band Transmit–Receive Module for Phased Array Systems in 130-nm SiGe BiCMOS
4. A 53–117 GHz LNA in 28-nm FDSOI CMOS