56‐1: Invited Paper: Ultra‐high Frame Rate ADS LCDs

Author:

Huang Zhonghao1,Shao Xibin1,Wang Zhangtao1,Zou Zhixiang1,Zhang Haoxiong1,Li Zhe1,Wang Xiaoyuan1,Min Taiye1,Zhang Yinlong1,Sha Jin1,Zhang Zhi1

Affiliation:

1. BOE Technology Group Co., Ltd. Beijing China

Abstract

In recent years, LCD end‐users are putting forward higher and higher requirements for dynamic picture display realism. With the increase of display panel refresh rate, dynamic picture fidelity has a significant improvement. The extremely high refresh rate has become one of the most important indicators of high‐end display panels, especially for video game usage scenarios. However, the increase in refresh rate is a challenge to the drive capability of LCD semiconductor TFTs (Thin Film Transistor), the response time of liquid crystal, and the transmission of high‐frequency signals, resulting in the maximum refresh rate of high‐refresh‐rate displays currently on the market still at 240 ~ 300 Hz. In this paper, we solve the display distortion due to low charging ratio at ultra‐high refresh rate by improving GOA(Gate Driver on Array) driver circuit and applying high stability and high mobility bilayer oxide semiconductor technology. At the same time, the 1ms GTG (Gray to Gray) response time is achieved by testing and optimizing the pixel slit angle and cell gap of ADS (Advanced Super Dimension Switch) LCD, ensuring no image trailing at refresh rates up to 600 Hz. Then the anti‐electromagnetic interference ability of high‐speed signal is improved by high‐speed signal transmission quality enhancement technology. Through the application of the above technologies, we have developed the ultra‐high refresh rate IT display panel products such as 600Hz frame rate FHD NB LCD and 500 Hz FHD MNT LCD. And the 16.0” WUXGA 600Hz ADS LCD achieves the highest CMR 9000 rating in VESA latest dynamic picture CMR certification.

Publisher

Wiley

Subject

General Medicine

Reference3 articles.

1. The Research of LCD Electromagnetic Simulation Based on Ansys. SID Symposium Digest of Technical Papers;Ran B;Volume 52, Issue,2021

2. Kim HD. Origin of Threshold Voltage Instability In Indium‐gallium‐zinc Oxide Thin Film Transistors. Applied Physics Letters;Jeong JK;Volume 93, Issue,2008

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