Affiliation:
1. Osaka University Osaka Japan
Abstract
A novel red LED using Eu‐doped GaN is a promising component for next‐generation micro‐LED displays with small‐size, full‐color, and ultrahigh‐definition. The red LED exhibits narrow‐band red emission and the wavelength is almost independent of ambient temperature and injected current, and the efficiency remains almost constant even at a ultrasmall chip. Monolithic vertically stacked full‐color LEDs on a sapphire substrate is demonstrated.
Reference5 articles.
1. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection;Nishikawa A;Appl. Phys. Exp
2. Perspective: Toward Efficient GaN-Based Red Light Emitting Diodes Using Europium Doping;Mitchell B;J. Appl. Phys,2018
3. Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs