Fe-Doped p-ZnO Nanostructures/n-GaN Heterojunction for “Blue-Free” Orange Light-Emitting Diodes-Reference-Cited by-同舟云学术

Fe-Doped p-ZnO Nanostructures/n-GaN Heterojunction for “Blue-Free” Orange Light-Emitting Diodes

Published:2017-06-14 Issue:17 Volume:5 Page:1700146
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Zhao Wanqiu¹,Xiong Xing¹,Han Yibo¹,Wen Li¹,Zou Zhengguang²,Luo Shijun³,Li Haixia¹⁴,Su Jun¹,Zhai Tianyou¹,Gao Yihua¹^ORCID

Affiliation:

1. Center for Nanoscale Characterization & Devices; Wuhan National Laboratory for Optoelectronics, and School of Physics, and School of Materials Science & Technology; Huazhong University of Science and Technology; Luoyu Road 1037 Wuhan 430074 P. R. China

2. School of Material Science & Engineering; Guangxi Nonferrous Metals Mineral and Materials; Collaborative Innovation Center; Guilin University of Technology; Jian'gan Road 12 Guilin 541004 Guangxi P. R. China

3. School of Sciences; Hubei Automotive Industries Institute; Shiyan 442002 P. R. China

4. School of Science; Wuhan Institute of Technology; Xiongchu Street 693 Wuhan 430073 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adom.201700146/fullpdf

Reference40 articles.

1. Prospects for LED lighting