Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation-Reference-Cited by-同舟云学术

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Published:2020-02-06 Issue:7 Volume:8 Page:1901808
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Huang Song¹,Wu Qiang¹²^ORCID,Jia Zixi¹,Jin Xiaorong¹,Fu Xianhui¹,Huang Hui³,Zhang Xiaodan⁴,Yao Jianghong¹,Xu Jingjun¹²

Affiliation:

1. Key Laboratory of Weak‐Light Nonlinear PhotonicsMinistry of EducationTEDA Institute of Applied Physics and School of PhysicsNankai University Tianjin 300457 China

2. Collaborative Innovation Center of Extreme OpticsShanxi University Taiyuan 030006 Shanxi China

3. Kunming Institute of Physics Kunming Yunnan 650223 China

4. Key Laboratory of Photo‐Electronic Thin Film Devices and Technology of TianjinInstitute of Photo‐Electronic Thin Film Devices and Technology of Nankai University Tianjin 300350 China

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901808

Reference49 articles.

1. Micrometre-scale silicon electro-optic modulator

2. Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors